Photoluminescence of ZnSe/CdSe/ZnSe Single Quantum Well
نویسندگان
چکیده
منابع مشابه
Spatial Inhomogeneity of Photoluminescence in InGaN Single Quantum Well Structures
Spatial distribution of photoluminescence (PL) spectra has been assessed in an InGaN single quantum well (SQW) structure by means of fluorescence microscopy and scanning near-field optical microscopy (SNOM) under illumination-collection mode. The PL intensity of fluorescence image is uniform at 77 K, but the dark spot areas were extended with increasing temperature. The nearfield PL images reve...
متن کاملCoupling of InGaN quantum-well photoluminescence to silver surface plasmons
The coincidence in excitation energy between surface plasmons on silver and the GaN band gap is exploited to couple the semiconductor spontaneous emission into the metal surface plasmons. A 3-nm InGaN/GaN quantum well ~QW! is positioned 12 nm from an 8-nm silver layer, well within the surface plasmon fringing field depth. A spectrally sharp photoluminescence dip, by a factor '55, indicates that...
متن کاملOptimizing GaN/A1GaN Multiple Quantum Well Structures by TimeResolved Photoluminescence
We present the results of picosecond time-resolved photoluminescence (PL) measurements for GaN/A1Ga1N MQWs with varying structural parameters, grown by metalorganic chemical vapor deposition under the optimal (iaN-like growth conditions. We have shown that the optimal GaN/A1GaN (x 0.2) MQW structures for UV light emitter applications are those with well widths ranging from 12 and 42 A and barri...
متن کاملcircuit modeling of quantum well heterostructure biopolar phototransistor مدل سازی مداری qw-hbpt
چکیده ندارد.
15 صفحه اولDefect-Induced Photoluminescence Blinking of Single Epitaxial InGaAs Quantum Dots
Here we report two types of defect-induced photoluminescence (PL) blinking behaviors observed in single epitaxial InGaAs quantum dots (QDs). In the first type of PL blinking, the "off" period is caused by the trapping of hot electrons from the higher-lying excited state (absorption state) to the defect site so that its PL rise lifetime is shorter than that of the "on" period. For the "off" peri...
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ژورنال
عنوان ژورنال: Journal of the Korean Vacuum Society
سال: 2007
ISSN: 1225-8822
DOI: 10.5757/jkvs.2007.16.3.192